US Patent Issued to HAMAMATSU PHOTONICS on Aug. 4 for "Solid state imaging device with improved charge transfer efficiency" (Japanese Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,799, issued on Aug. 4, was assigned to HAMAMATSU PHOTONICS K.K. (Hamamatsu, Japan).

"Solid state imaging device with improved charge transfer efficiency" was invented by Shin-ichiro Takagi (Hamamatsu, Japan), Mitsuhito Mase (Hamamatsu, Japan), Jun Hiramitsu (Hamamatsu, Japan), Yasuhito Yoneta (Hamamatsu, Japan) and Masaharu Muramatsu (Hamamatsu, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The photosensitive region includes a first impurity region and a second impurity region having a higher impurity concentration than that of the first impurity region. The photosensitive region includes one end positioned away from the transfer section in th...