ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,913, issued on Aug. 25, was assigned to HAMAMATSU PHOTONICS K.K. (Hamamatsu, Japan).

"Light emitting diode element" was invented by Asuka Mishima (Hamamatsu, Japan), Daisuke Iida (Hamamatsu, Japan) and Takahide Yanai (Hamamatsu, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A light emitting diode element includes: a first element portion including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a first active layer; and a second element portion including a third semiconductor layer of the first conductivity type, a fourth semiconductor layer of the second conductivity t...