US Patent Issued to HAI PRECISION INDUSTRY, Hon Young Semiconductor on Dec. 2 for "Manufacturing method of a semiconductor device with junction field effect transistor" (Taiwanese Inventors)

ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,490,450, issued on Dec. 2, was assigned to HAI PRECISION INDUSTRY Co. LTD. (New Taipei, Taiwan) and Hon Young Semiconductor Corp. (Hsinchu, Taiwan).

"Manufacturing method of a semiconductor device with junction field effect transistor" was invented by Yi-Kai Hsiao (New Taipei, Taiwan), Kuang-Hao Chiang (Hsinchu, Taiwan) and Hao-Chung Kuo (New Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A manufacturing method of a semiconductor device includes the following steps. A base region is formed in a substrate. A protective layer is formed on the substrate and covers the base region. First and second sacrificial layers are formed on the substrat...