US Patent Issued to GTA SEMICONDUCTOR on Nov. 11 for "Method for manufacturing trench in semiconductor substrate, and semiconductor device" (Chinese Inventor)

ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,469,712, issued on Nov. 11, was assigned to GTA SEMICONDUCTOR Co. LTD. (Shanghai).

"Method for manufacturing trench in semiconductor substrate, and semiconductor device" was invented by Guoqing Leng (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a trench in a semiconductor substrate, and a semiconductor device are provided. The method includes: providing the semiconductor substrate; forming a hard mask layer on the semiconductor substrate, performing exposure and development to etch the hard mask layer and the semiconductor substrate to form a trench in the semiconductor substrate, the trench having a side surface an...