US Patent Issued to GOOGLE on Nov. 3 for "Low-defect optoelectronic devices grown by MBE and other techniques" (Swiss, American, French Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,496, issued on Nov. 3, was assigned to GOOGLE LLC (Mountain View, Calif.).

"Low-defect optoelectronic devices grown by MBE and other techniques" was invented by Aurelien Jean Francois David (San Francisco), Nicolas Grandjean (Preverenges, Switzerland), Camille Haller (Yverdon-les-Bains, Switzerland), Jean-Francois Carlin (St-Sulpice VD, Switzerland) and Sebastian Pascal Tamariz Kaufmann (Antibes, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "In a general aspect, a method for growing an InGaN optoelectronic in a reaction chamber, by MOCVD, includes controlling a surface temperature of a wafer to be at least 750deg C. during growth of a light-e...