US Patent Issued to GlobalWafers on Nov. 3 for "Methods for preparing a single crystal silicon ingot with reduced radial resistivity variation" (American, Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,781,379, issued on Nov. 3, was assigned to GlobalWafers Co. Ltd. (Hsinchu, Taiwan).

"Methods for preparing a single crystal silicon ingot with reduced radial resistivity variation" was invented by Carissima Marie Hudson (St. Charles, Mo.), JaeWoo Ryu (Plano, Texas), Young Gil Jeong (Frisco, Texas) and Chun-Sheng Wu (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods for preparing a single crystal silicon ingot with reduced radial resistivity variation are disclosed. The silicon melt is counter-doped in a plurality of batches while growing the single crystal silicon ingot. The amount of second dopant in each batch may be controlle...