US Patent Issued to GLOBALWAFERS on Nov. 3 for "Buffer layer structure to improve GaN semiconductors" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,392, issued on Nov. 3, was assigned to GLOBALWAFERS Co. LTD. (Hsinchu, Taiwan).

"Buffer layer structure to improve GaN semiconductors" was invented by Jia-Zhe Liu (Hsinchu, Taiwan), Chih-Yuan Chuang (Hsinchu, Taiwan), Po Jung Lin (Hsinchu, Taiwan) and Hong Che Lin (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A heterostructure, includes: a substrate; and a buffer layer that includes a plurality of layers having a composition AlxInyGa1-x-yN, where xless than equal to1 and 0less than equal toyless than equal to1; wherein the buffer layer has a first region that includes at least two layers, a second region that includes at least two l...