US Patent Issued to GlobalWafers on Feb. 17 for "Semiconductor on insulator structure comprising a buried high resistivity layer" (Missouri, Ohio, Texas Inventors)

ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,611, issued on Feb. 17, was assigned to GlobalWafers Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor on insulator structure comprising a buried high resistivity layer" was invented by Igor Peidous (Liberty Township, Ohio), Andrew M Jones (Wildwood, Mo.), Srikanth Kommu (St. Charles, Mo.) and Horacio Josue Mendez (Austin, Texas).

According to the abstract* released by the U.S. Patent & Trademark Office: "A cost effective process flow for manufacturing semiconductor on insulator structures is parallel is provided. Each of the multiple semiconductor-on-insulator composite structures prepared in parallel comprises a charge trapping layer (CTL)."

The patent was filed on Oct. 18, 2022, und...