US Patent Issued to GlobalWafers on Dec. 30 for "Method of performing crystal growth processes on a first crystal seed by adjusting a ratio difference of an axial temperature gradient and a radial temperature gradient" (Taiwanese Inventor)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,509,794, issued on Dec. 30, was assigned to GlobalWafers Co. Ltd. (Hsinchu, Taiwan).

"Method of performing crystal growth processes on a first crystal seed by adjusting a ratio difference of an axial temperature gradient and a radial temperature gradient" was invented by Ching-Shan Lin (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A crystal growing method for crystals include the following steps. A first crystal seed is provided, the first crystal seed has a first monocrystalline proportion and a first size. N times of crystal growth processes are performed on the first crystal seed, wherein each of the crystal growth process will incr...