US Patent Issued to GlobalWafers on Dec. 16 for "Methods for implanting semiconductor structures with ions" (Massachusetts, Missouri Inventors)

ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,500,126, issued on Dec. 16, was assigned to GlobalWafers Co. Ltd. (Hsinchu, Taiwan).

"Methods for implanting semiconductor structures with ions" was invented by Peter Daniel Albrecht (O'Fallon, Mo.) and Junnan Wu (Ipswich, Mass.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Systems for implanting semiconductor structures with ions are disclosed. The semiconductor structure is positioned on a heatsink and ions are implanted through a front surface of the semiconductor structure to form a damage region in the semiconductor structure. A parameter related to the coefficient of friction of the heatsink is measured. The parameter is compared to a baseline ra...