US Patent Issued to GlobalFoundries U.S. on Sept. 8 for "Low leakage charge/discharge circuit" (Indian Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,732,099, issued on Sept. 8, was assigned to GlobalFoundries U.S. Inc. (Malta, N.Y.).

"Low leakage charge/discharge circuit" was invented by Siva Kumar Chinthu (Bangalore, India), Palle Sundar Veerendranath (Andhra Pradesh, India), Rajneesh Kumar (Uttar Pradesh, India) and Abdul Rajak (Bangalore, India).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed is a charge/discharge circuit structure for an output node (e.g., of a device, such as a charge pump in a memory structure, such as in a resistive random access memory (RRAM) structure). The circuit structure includes, among other components: a positive supply voltage node at a positive supply voltag...