US Patent Issued to GLOBALFOUNDRIES U.S. on Sept. 8 for "Hybrid bonding with selectively formed dielectric material" (New York Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,560, issued on Sept. 8, was assigned to GLOBALFOUNDRIES U.S. Inc. (Malta, N.Y.).

"Hybrid bonding with selectively formed dielectric material" was invented by Ravi Prakash Srivastava (Clifton Park, N.Y.) and Matthew Charles Gorfien (Saratoga Springs, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for hybrid bonding a first semiconductor substrate to a second semiconductor substrate includes forming a first plurality of metal pads on a face of the first substrate, forming a second plurality of metal pads on a face of the second substrate, selectively forming a first dielectric layer over a first insulating material of the first substrate...