US Patent Issued to GlobalFoundries U.S. on Oct. 14 for "Methods, apparatus, and manufacturing system for self-aligned patterning of a vertical transistor" (New York Inventors)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,446,293, issued on Oct. 14, was assigned to GlobalFoundries U.S. Inc. (Santa Clara, Calif.).

"Methods, apparatus, and manufacturing system for self-aligned patterning of a vertical transistor" was invented by Chanro Park (Clifton Park, N.Y.), Ruilong Xie (Niskayuna, N.Y.) and Min Gyu Sung (Latham, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method, apparatus, and manufacturing system are disclosed herein for a vertical field effect transistor patterned in a self-aligned process. A plurality of fins is formed. A gate structure is formed on at least a first side and a second side of a lower portion of each fin. A spacer is formed on at least a f...