US Patent Issued to GlobalFoundries U.S. on Oct. 14 for "Field effect transistor with adjustable effective gate length" (German Inventor)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,446,253, issued on Oct. 14, was assigned to GlobalFoundries U.S. Inc. (Malta, N.Y.).

"Field effect transistor with adjustable effective gate length" was invented by Nan Wu (Dresden, Germany).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed is a structure including a field effect transistor (FET). The FET includes, on an insulator layer above a substrate, source/drain regions and a section of a semiconductor layer extending laterally between the source/drain regions. A primary gate structure is made of the insulator layer and a well region in the substrate opposite at least the section of the semiconductor layer extending laterally between the sou...