US Patent Issued to GLOBALFOUNDRIES U.S. on Nov. 3 for "Opening in stress-inducing liner(s) between transistors" (New York Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,368, issued on Nov. 3, was assigned to GLOBALFOUNDRIES U.S. INC. (Malta, N.Y.).

"Opening in stress-inducing liner(s) between transistors" was invented by George Robert Mulfinger (Queensbury, N.Y.), Selina A. Mala (Ballston Spa, N.Y.), Pushparaj Dirgharaj Pathak (Ballston Spa, N.Y.) and Chung Foong Tan (Ballston Spa, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A structure includes a substrate, a first transistor on the substrate and a second transistor on the substrate. The second transistor is spaced apart from the first transistor by an isolation region. At least one stress-inducing liner is over the first transistor and the second transisto...