ALEXANDRIA, Va., March 3 -- United States Patent no. 12,568,802, issued on March 3, was assigned to GLOBALFOUNDRIES U.S. Inc. (Malta, N.Y.).
"Single diffusion cut for gate structures" was invented by Hui Zang (Guilderland, N.Y.), Ruilong Xie (Niskayuna, N.Y.) and Jessica M. Dechene (Watervliet, N.Y.).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to semiconductor structures and, more particularly, to single diffusion cut for gate structures and methods of manufacture. The structure includes a single diffusion break extending into a substrate between diffusion regions of adjacent gate structures, the single diffusion break filled with an insulator material and further comprising ...