US Patent Issued to GlobalFoundries U.S. on March 3 for "Semiconductor controlled rectifier and method to form same" (Vermont Inventors)

ALEXANDRIA, Va., March 3 -- United States Patent no. 12,568,692, issued on March 3, was assigned to GlobalFoundries U.S. Inc. (Malta, N.Y.).

"Semiconductor controlled rectifier and method to form same" was invented by Anindya Nath (Essex Junction, Vt.), Alain F. Loiseau (Williston, Vt.), Robert J. Gauthier Jr. (Williston, Vt.) and Souvick Mitra (Essex Junction, Vt.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of the disclosure provide a semiconductor controlled rectifier (SCR) structure and methods to form the same. The SCR structure may include a first polycrystalline semiconductor material on a first insulator and includes a first well therein. A monocrystalline semiconductor material is adja...