US Patent Issued to GLOBALFOUNDRIES U.S. on March 24 for "Structure and method for memory element to confine metal with spacer" (Singaporean, German Inventors)

ALEXANDRIA, Va., March 24 -- United States Patent no. 12,588,428, issued on March 24, was assigned to GLOBALFOUNDRIES U.S. Inc. (Malta, N.Y.).

"Structure and method for memory element to confine metal with spacer" was invented by Robert Viktor Seidel (Dresden, Germany), Suk Hee Jang (Singapore), Anastasia Voronova (Dresden, Germany) and Young Seon You (Singapore).

According to the abstract* released by the U.S. Patent & Trademark Office: "The disclosure provides a structure and method for a memory element to confine a metal (e.g., a remaining portion of a metallic residue) with a spacer. A structure according to the disclosure includes a memory element over a first portion of an insulator layer. A portion of the memory element includes a ...