US Patent Issued to GlobalFoundries U.S. on March 17 for "Metal oxide semiconductor devices and integration methods" (New York Inventor)

ALEXANDRIA, Va., March 17 -- United States Patent no. 12,581,686, issued on March 17, was assigned to GlobalFoundries U.S. Inc. (Malta, N.Y.).

"Metal oxide semiconductor devices and integration methods" was invented by Shesh Mani Pandey (Saratoga Springs, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device comprises a semiconductor layer over an insulator layer and a base layer under the insulator layer. A well is in the base layer, a doped region is above and coupled with the well, and the doped region is in the insulator layer. A drift region is above and coupled with the doped region, and the drift region is at least partially in the semiconductor layer. A gate stack is partially ov...