US Patent Issued to GlobalFoundries U.S. on June 9 for "Semiconductor device having a self-forming barrier layer at via bottom" (New York Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. RE50,914, issued on June 9, was assigned to GlobalFoundries U.S. Inc. (Malta, N.Y.).

"Semiconductor device having a self-forming barrier layer at via bottom" was invented by Larry Zhao (Niskayuna, N.Y.), Ming He (Saratoga Springs, N.Y.), Xunyuan Zhang (Albany, N.Y.) and Sean Xuan Lin (Watervliet, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "An approach for forming a semiconductor device is provided. In general, the device is formed by providing a metal layer, a cap layer over the metal layer, and an ultra low k layer over the cap layer. A via is then formed through the ultra low k layer and the cap layer. Once the via is formed, a barrier layer (e.g....