US Patent Issued to GlobalFoundries U.S. on June 23 for "Polysilicon resistor aligned between gate structures" (Vermont Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,698, issued on June 23, was assigned to GlobalFoundries U.S. Inc. (Malta, N.Y.).

"Polysilicon resistor aligned between gate structures" was invented by Marvin G. L. Montaque (Burlington, Vt.), Cathryn J. Christiansen (Richmond, Vt.), Craig B. Beucler (South Burlington, Vt.) and Timothy W. Kemerer (Essex Junction, Vt.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A structure includes a first gate structure spaced from a second gate structure in a field effect transistor (FET) area of a substrate. A polysilicon resistor is in a space between the first gate structure and the second gate structure. The polysilicon resistor has a lower surface that is f...