ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,324, issued on June 16, was assigned to GlobalFoundries U.S. Inc. (Malta, N.Y.).
"Lateral capacitors of semiconductor devices" was invented by David Pritchard (Beacon, N.Y.), Hong Yu (Clifton Park, N.Y.) and Zhixing Zhao (Dresden, Germany).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device is provided. The semiconductor device includes a substrate, a gate electrode, an isolation structure, and an electrode plate. The gate electrode is over the substrate and the isolation structure is in contact with the gate electrode. The electrode plate is in the isolation structure."
The patent was filed on Jan. 9, 2023, under Application No. 1...