US Patent Issued to GlobalFoundries U.S. on July 21 for "Transistor structures with interleaved body contacts and gate contacts" (American, Indian Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,248, issued on July 21, was assigned to GlobalFoundries U.S. Inc. (Malta, N.Y.).

"Transistor structures with interleaved body contacts and gate contacts" was invented by Venkata Narayana Rao Vanukuru (Karnataka, India) and Steven M. Shank (Jericho, Vt.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Structures including a field-effect transistor field-effect and methods of forming a structure including a field-effect transistor. The structure comprises a trench isolation region in a substrate, and a body contact region that extends through the trench isolation region to the substrate. The structure further comprises a field-effect transistor includin...