US Patent Issued to GlobalFoundries U.S. on July 14 for "Ferroelectric memory device with multi-level bit cell" (German Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,781, issued on July 14, was assigned to GlobalFoundries U.S. Inc. (Malta, N.Y.).

"Ferroelectric memory device with multi-level bit cell" was invented by Zhixing Zhao (Dresden, Germany), Dominik M. Kleimaier (Dresden, Germany) and Stefan Duenkel (Dresden, Germany).

According to the abstract* released by the U.S. Patent & Trademark Office: "A ferroelectric memory device includes a substrate including a source region and a drain region, and a gate structure disposed over the substrate. The gate structure includes a gate electrode including a plurality of electrode portions arranged in a first direction parallel to a top surface of the substrate, an oxide layer including a plurality ...