US Patent Issued to GlobalFoundries U.S. on Feb. 3 for "Integrated circuit structure in porous semiconductor region and method to form same" (Vermont Inventors)

ALEXANDRIA, Va., Feb. 3 -- United States Patent no. 12,543,379, issued on Feb. 3, was assigned to GlobalFoundries U.S. Inc. (Malta, N.Y.).

"Integrated circuit structure in porous semiconductor region and method to form same" was invented by Anindya Nath (Essex Junction, Vt.), Rajendran Krishnasamy (Essex Junction, Vt.) and Robert J. Gauthier Jr. (Williston, Vt.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of the disclosure provide a structure including a semiconductor substrate. The semiconductor substrate includes a porous semiconductor region, the porous semiconductor region including a cavity. The cavity includes a semiconductor layer therein. The porous semiconductor further includes a devi...