US Patent Issued to GlobalFoundries U.S. on Feb. 17 for "Enhancement mode transistor with a robust gate and method" (Vermont, Texas Inventors)

ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,323, issued on Feb. 17, was assigned to GlobalFoundries U.S. Inc. (Malta, N.Y.).

"Enhancement mode transistor with a robust gate and method" was invented by Santosh Sharma (Austin, Texas) and Mark D. Levy (Williston, Vt.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A disclosed structure includes an enhancement mode high electron mobility transistor (HEMT). The HEMT includes a barrier layer with a thick portion positioned laterally between thin portions and a gate. The gate includes a semiconductor layer (e.g., a P-type III-V semiconductor layer) on the thick portion of the barrier layer and having a thick portion positioned laterally between thin ...