US Patent Issued to GlobalFoundries U.S. on Dec. 30 for "Static random access memory (SRAM) cell with variable toggle threshold voltage and memory circuit including SRAM cells" (Chinese, American Inventors)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,512,149, issued on Dec. 30, was assigned to GlobalFoundries U.S. Inc. (Malta, N.Y.).

"Static random access memory (SRAM) cell with variable toggle threshold voltage and memory circuit including SRAM cells" was invented by Xuemei Hui (Shanghai), Shafiullah Syed (Murphy, Texas), Qiao Yang (Shanghai) and Wei Zhao (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "A static random access memory (SRAM) cell includes P-type and N-type transistors having secondary gates. A node connected to all secondary gates receives a write enable signal (WEN). A low WEN forward biases the P-type transistors and increases the toggle threshold voltage (Vtth) of the SRAM...