US Patent Issued to GlobalFoundries U.S. on Dec. 2 for "Semiconductor-on-insulator field-effect transistors including stress-inducing components" (New York, Vermont Inventors)

ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,489,013, issued on Dec. 2, was assigned to GlobalFoundries U.S. Inc. (Malta, N.Y.).

"Semiconductor-on-insulator field-effect transistors including stress-inducing components" was invented by Shesh Mani Pandey (Saratoga Springs, N.Y.), Rajendran Krishnasamy (Essex Junction, Vt.) and Judson R. Holt (Ballston Lake, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A transistor is provided. The transistor includes a substrate, a gate structure, a semiconductor structure, and a dielectric component. The gate structure is over the substrate and the semiconductor structure is adjacent to the gate structure. The semiconductor structure has a first side facing ...