US Patent Issued to GlobalFoundries U.S. on April 21 for "IC structure with gate electrode fully within V-shaped cavity" (Vermont Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,605, issued on April 21, was assigned to GlobalFoundries U.S. Inc. (Malta, N.Y.).

"IC structure with gate electrode fully within V-shaped cavity" was invented by Megan Lydon-Nuhfer (Essex Junction, Vt.), Steven M. Shank (Jericho, Vt.), Aaron L. Vallett (Jericho, Vt.), Michel Abou-Khalil (Essex Junction, Vt.), Sarah A. McTaggart (Essex Junction, Vt.) and Rajendran Krishnasamy (Essex Junction, Vt.).

According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit (IC) structure includes a V-shaped cavity in a semiconductor substrate. A source region and a drain region are on opposing sides of the V-shaped cavity. A gate structure includes a gate di...