US Patent Issued to GLOBALFOUNDRIES U.S. on April 21 for "Gate structure over corner segment of semiconductor region" (German, American, Bulgarian Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,576, issued on April 21, was assigned to GLOBALFOUNDRIES U.S. Inc. (Malta, N.Y.).

"Gate structure over corner segment of semiconductor region" was invented by Kiril Biserov Borisov (Sofia, Bulgaria), Mohammed Ahmed Fouad Ibrahim Darwish (Dresden, Germany), Francois C. Weisbuch (Dresden, Germany), Shady Ahmed Abdelwahed Ahmed Elshafie (Dresden, Germany), David Charles Pritchard (Schenectady, N.Y.) and Benoit Francois Claude Ramadout (Dresden, Germany).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of the disclosure provide a gate structure over a corner segment of a semiconductor region. A structure according to the disclosure includes a ...