US Patent Issued to GLOBALFOUNDRIES Singapore on Oct. 27 for "Transistor coupled to terminals for injecting charge carriers into pair of spacers" (Singaporean Inventors)

ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,650, issued on Oct. 27, was assigned to GLOBALFOUNDRIES Singapore Pte. Ltd. (Singapore).

"Transistor coupled to terminals for injecting charge carriers into pair of spacers" was invented by Yongshun Sun (Singapore) and Eng Huat Toh (Singapore).

According to the abstract* released by the U.S. Patent & Trademark Office: "The disclosure provides a structure including a transistor coupled to terminals for injecting charge carriers into a pair of spacers. The structure includes a gate structure over a substrate and having a pair of spacers on opposite horizontal ends of the gate structure. A pair of source/drain (S/D) regions is within the substrate, and each S/D region is below a res...