ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,446,266, issued on Oct. 14, was assigned to GlobalFoundries Singapore Pte. Ltd. (Singapore).
"Fe-FET structure with buried electrode" was invented by Shyue Seng Tan (Singapore), Kian Ming Ng (Singapore) and Eng Huat Toh (Singapore).
According to the abstract* released by the U.S. Patent & Trademark Office: "A ferroelectric transistor (FeFET) memory device includes a metal gate, a gate dielectric layer adjacent to the metal gate, a semiconductor channel layer adjacent to the gate dielectric layer, a metal drain electrode, and a metal source electrode recessed into the semiconductor channel layer. The metal gate may be oriented above or below the metal source and drain electrodes with ...