US Patent Issued to GLOBALFOUNDRIES Singapore on March 31 for "Hall effect devices integrated with junction transistors" (Singaporean Inventors)

ALEXANDRIA, Va., March 31 -- United States Patent no. 12,593,616, issued on March 31, was assigned to GLOBALFOUNDRIES Singapore Pte. Ltd. (Singapore).

"Hall effect devices integrated with junction transistors" was invented by Xinfu Liu (Singapore), Wensheng Deng (Singapore), Jason Kin Wei Wong (Singapore) and Qianqian Meng (Singapore).

According to the abstract* released by the U.S. Patent & Trademark Office: "The disclosed subject matter relates generally to semiconductor devices. More particularly, the present disclosure relates to Hall effect devices integrated with junction transistors to achieve tunable parameters within the Hall effect devices. The present disclosure also relates to methods of forming the Hall effect devices."

The ...