ALEXANDRIA, Va., March 3 -- United States Patent no. 12,568,631, issued on March 3, was assigned to GlobalFoundries Singapore Pte. Ltd. (Singapore).

"Three terminal memory cells and method of making the same" was invented by Jia Rui Thong (Singapore), Jianxun Sun (Singapore), Eng Huat Toh (Singapore) and Juan Boon Tan (Singapore).

According to the abstract* released by the U.S. Patent & Trademark Office: "The disclosed subject matter relates generally to memory devices and a method of forming the same. More particularly, the present disclosure relates to three terminal resistive random-access (ReRAM) memory structures having two bottom electrodes and one top electrode. The present disclosure provides a structure including a first bottom e...