US Patent Issued to GlobalFoundries Singapore on June 23 for "Multiple-depth trench isolation for electrostatic discharge protection devices" (Singaporean, American Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,664, issued on June 23, was assigned to GlobalFoundries Singapore Pte. Ltd. (Singapore).

"Multiple-depth trench isolation for electrostatic discharge protection devices" was invented by Kyong Jin Hwang (Singapore) and Souvick Mitra (Essex Junction, Vt.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Structures including an electrostatic discharge protection device and methods of forming same. The structure comprises a semiconductor substrate having a top surface, an electrostatic discharge protection device including a base in the semiconductor substrate, and first and second trench isolation regions disposed in the base of the electrostatic discharg...