ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,758, issued on July 28, was assigned to GlobalFoundries Singapore Pte. Ltd. (Singapore).
"Semiconductor devices and methods of forming the same" was invented by Shu Hui Lee (Singapore), Jianxun Sun (Singapore) and Juan Boon Tan (Singapore).
According to the abstract* released by the U.S. Patent & Trademark Office: "A device includes an antifuse structure. The antifuse structure includes a first contact structure and a second contact structure in a first interlevel dielectric (ILD) layer, an opening arranged between the first contact structure and the second contact structure in the first ILD layer, and a dielectric capping layer lining at least sidewalls of the opening. A second ...