US Patent Issued to GLOBALFOUNDRIES Singapore on July 21 for "Metal-oxide semiconductor transistors" (Singaporean Inventor)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,226, issued on July 21, was assigned to GLOBALFOUNDRIES Singapore Pte. Ltd. (Singapore).

"Metal-oxide semiconductor transistors" was invented by Bong Woong Mun (Singapore).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to semiconductor structures and, more particularly, to metal-oxide semiconductor transistors and methods of manufacture. The structure includes: a substrate comprising a drift region and a body region; a gate structure between the drift region and the body region; an insulator material over the gate structure, the drift region and the body region; and an air gap within the insulator material and extending...