ALEXANDRIA, Va., Feb. 3 -- United States Patent no. 12,543,385, issued on Feb. 3, was assigned to GlobalFoundries Singapore Pte. Ltd. (Singapore).
"Single-photon avalanche diode with isolated junctions" was invented by Xinshu Cai (Singapore), Shyue Seng Tan (Singapore), Eng Huat Toh (Singapore) and Kiok Boone Elgin Quek (Singapore).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to semiconductor structures and, more particularly, to a single-photon avalanche diode with isolated junctions and methods of manufacture. The structure includes a first p-n junction in a semiconductor material; and a second p-n junction in a second semiconductor material isolated from the first p-n junct...