US Patent Issued to GlobalFoundries Singapore on Feb. 17 for "Layer stacks for a resistive memory element" (Singaporean Inventors)

ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,563, issued on Feb. 17, was assigned to GlobalFoundries Singapore Pte. Ltd. (Singapore).

"Layer stacks for a resistive memory element" was invented by Curtis Chun-I Hsieh (Singapore), Kai Kang (Singapore), Wanbing Yi (Singapore), Yongshun Sun (Singapore), Eng-Huat Toh (Singapore) and Juan Boon Tan (Singapore).

According to the abstract* released by the U.S. Patent & Trademark Office: "Structures that include a layer stack for a resistive memory element and methods of forming a structure that includes a layer stack for a resistive memory element. The structure comprises a resistive memory element including a first electrode, a second electrode, and a switching layer disposed betwe...