ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,490,425, issued on Dec. 2, was assigned to GlobalFoundries Singapore Pte. Ltd. (Singapore).
"Wrap-around memory circuit" was invented by Xinshu Cai (Singapore), Shyue Seng Tan (Singapore) and Eng Huat Toh (Singapore).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to a structure which includes a semiconductor substrate, a recessed shallow trench isolation structure within the semiconductor substrate, and a gate structure provided at least partially over the recessed shallow isolation structure."
The patent was filed on Oct. 3, 2022, under Application No. 17/958,806.
*For further information, including images, charts and tab...