US Patent Issued to GE Aviation Systems on Aug. 4 for "Radiation hardened semiconductor power device" (New York Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,739, issued on Aug. 4, was assigned to GE Aviation Systems LLC (Grand Rapids, Mich.).

"Radiation hardened semiconductor power device" was invented by Collin William Hitchcock (Clifton Park, N.Y.) and Biju Jacob (Niskayuna, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A radiation hardened semiconductor device including a heavily doped substrate of a semiconductor device, a drift layer having a substantially uniform doping concentration and a thickness is provided. The doping concentration and the thickness of the drift layer are such that when the semiconductor device is operating at a maximum voltage rating, an electrical field profile in the ...