ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,324, issued on Feb. 17, was assigned to GANEXT (ZHUHAI) TECHNOLOGY Co. LTD (Guangdong, China).
"Semiconductor power device and method for manufacturing the same" was invented by Yifeng Wu (Guangdong, China) and Fanming Zeng (Guangdong, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor power device and a method for manufacturing the same. The semiconductor power device comprises the back electrode, the substrate layer, the insulating buffer layer, the channel layer, the barrier layer, the dielectric layer, and the passivation layer, which are stacked sequentially from bottom to top. The substrate layer comprises a conductive substr...