US Patent Issued to FULLINK TECHNOLOGY on Aug. 4 for "Memory expansion device" (Chinese Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,699,421, issued on Aug. 4, was assigned to FULLINK TECHNOLOGY Co. LTD. (Shenzhen, China).

"Memory expansion device" was invented by Danyun Mao (Shenzhen, China), Jiajun Yang (Shenzhen, China), Xingquan Chen (Shenzhen, China) and Jie Xiao (Shenzhen, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory expansion device is provided and includes a shell and a memory expansion component. A contact surface, a heat dissipation surface and a heat conduction port are disposed on the shell. An accommodating cavity is arranged inside the shell. The heat conduction port penetrates through the contact surface and the heat dissipation surface and is separated...