US Patent Issued to FUJITSU OPTICAL COMPONENTS on Feb. 24 for "Photodetector and photonic integrated device" (Japanese Inventor)

ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,560,761, issued on Feb. 24, was assigned to FUJITSU OPTICAL COMPONENTS Ltd. (Kawasaki, Japan).

"Photodetector and photonic integrated device" was invented by Takasi Simoyama (Zama, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A photodetector has a substrate, a light input layer formed as a first semiconductor over the substrate, the first semiconductor being transparent to a wavelength being used, and a light absorption layer formed as a second semiconductor on the light input layer, the second semiconductor having a bandgap smaller than that of the first semiconductor. The light absorption layer has a first region doped with a first conductivit...