US Patent Issued to Fujitsu on July 14 for "Semiconductor device, amplifying device, and method of manufacturing semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,146, issued on July 14, was assigned to Fujitsu Ltd. (Kawasaki, Japan).

"Semiconductor device, amplifying device, and method of manufacturing semiconductor device" was invented by Tsuyoshi Takahashi (Ebina, Japan) and Kenichi Kawaguchi (Ebina, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate; a gate electrode, a source electrode, and a drain electrode, the gate electrode, the source electrode and the drain electrode being formed on the substrate; a plurality of nonconductive nanowires formed two-dimensionally on an upper surface of the substrate so as to extend perpendicularly to the upper surface of t...