US Patent Issued to FUJIMI on June 2 for "Polishing composition, polishing method and method for producing semiconductor substrate" (Japanese Inventor)

ALEXANDRIA, Va., June 2 -- United States Patent no. 12,644,016, issued on June 2, was assigned to FUJIMI Inc. (Kiyosu, Japan).

"Polishing composition, polishing method and method for producing semiconductor substrate" was invented by Masashi Abe (Kiyosu, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "To provide a polishing composition that can polish titanium nitride film at a higher polishing removal rate with respect to the polishing removal rate for silicon oxide film (specifically, a high selection ratio expressed as polishing removal rate for titanium nitride film/polishing removal rate for silicon oxide film) and that has high dispersion stability. A polishing composition containing abrasive grai...