US Patent Issued to Fujian Jinhua Integrated Circuit on Sept. 2 for "Semiconductor device and method of fabricating the same" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 3 -- United States Patent no. 12,408,328, issued on Sept. 2, was assigned to Fujian Jinhua Integrated Circuit Co. Ltd. (Quanzhou, China).

"Semiconductor device and method of fabricating the same" was invented by Changfu Ye (Quanzhou, China), Tsuo-Wen Lu (Quanzhou, China), Mingqin Shangguan (Quanzhou, China) and Xiqin Wang (Quanzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a semiconductor device and a method of fabricating the same, the semiconductor device includes a substrate, an insulating layer, a plurality of bit lines, and a bit line contact. The insulating layer is disposed on the substrate, the bit lines are disposed on the insulating...