US Patent Issued to Fujian Jinhua Integrated Circuit on May 19 for "Semiconductor memory device and method for forming the same" (Chinese Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,127, issued on May 19, was assigned to Fujian Jinhua Integrated Circuit Co. Ltd. (Quanzhou City, China).

"Semiconductor memory device and method for forming the same" was invented by Yu-Hsien Li (Quanzhou City, China), Xiaobing Chen (Quanzhou City, China) and Daochu Wu (Quanzhou City, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device includes a substrate, a plurality of bottom electrodes arranged on the substrate along a row direction and a column direction to form an array. The row direction and the column direction are perpendicular. A supporting layer is disposed on the substrate and in direct contact with the bott...