US Patent Issued to Fujian Jinhua Integrated Circuit on March 17 for "Semiconductor memory device having interface layer between capacitor structures and method of fabricating the same" (Chinese Inventors)

ALEXANDRIA, Va., March 17 -- United States Patent no. 12,581,638, issued on March 17, was assigned to Fujian Jinhua Integrated Circuit Co. Ltd. (Quanzhou City, China).

"Semiconductor memory device having interface layer between capacitor structures and method of fabricating the same" was invented by Liandie Zhuang (Quanzhou City, China), Ronghui Lin (Quanzhou City, China), Ling Li (Quanzhou City, China), Wen-Yi Teng (Quanzhou City, China) and Tsun-Min Cheng (Quanzhou City, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a semiconductor memory device and a method of fabricating the same, with the semiconductor memory device including a substrate, a plurality of capacitor s...