US Patent Issued to Fujian Jinhua Integrated Circuit on June 23 for "Semiconductor memory device and method for forming semiconductor memory device" (Chinese Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,594, issued on June 23, was assigned to Fujian Jinhua Integrated Circuit Co. Ltd. (Quanzhou City, China).

"Semiconductor memory device and method for forming semiconductor memory device" was invented by Peng Guo (Quanzhou City, China) and Yuanbao Wang (Quanzhou City, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for fabricating a semiconductor memory device includes: forming word lines and bit lines; forming filling patterns between the bit lines and at ends of the bit lines, and forming first gaps surrounded by the filling patterns and the bit lines; depositing an insulating material, to fill up the first gaps surrounded by the fill...